B04N03 Datasheet | Specifications & PDF Download

B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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CYStech Electronics Corp. Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSF

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www.DataSheet4U.com IPB04N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOS

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www.DataSheet4U.com IPB04N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested P

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CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2020.01.13 Page No. : 1/9 N-Channel Logic Level Enhancement Mod

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CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS

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CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSF

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested

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IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for

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IPP04N03L IPB04N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.9 80 P- TO

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