MTB04N03F3 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTB04N03F3 - N-Channel Enhancement Mode Power MOSFET

Features

Low On-resistance.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
RoHS compliant package 30V 115A 3.4mΩ 4.3mΩ Symbol MTB04N03F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB04N03F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree.

Datasheet Details

Part number	MTB04N03F3
Manufacturer	CYStech Electronics
File Size	357.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB04N03F3 Datasheet
Additional preview pages of the MTB04N03F3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB04N03F3 BVDSS ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A Features • Low On-resistance • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 30V 115A 3.4mΩ 4.

Published: Oct 26, 2016 |