EMB04N03V Datasheet - Excelliance MOS

EMB04N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current TC = 25 °C ID TA = 25 °C Pulsed Drain Current1 TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS =32A, RG=25Ω EAS Repetiti.

EMB04N03V-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB04N03V

Manufacturer:

Excelliance MOS

File Size:

868.57 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB04N03V EMB04N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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