EMB04N03HS Datasheet - Excelliance MOS

EMB04N03HS N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB04N03HS LIMITS UNIT Gate‐Source Voltage Continuous Drain Current1 TC = 25 °C TA= 25 °C(t≦10s) Pulsed Drain Current2 TA= 25 °C(Steady‐State) TC = 100 °C Avalanche Current Avalanche Energy Repetitive Ava.

EMB04N03HS-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB04N03HS

Manufacturer:

Excelliance MOS

File Size:

268.23 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB04N03HS EMB04N03HS N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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