EMB04N03HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB04N03HS LIMITS UNIT Gate‐Source Voltage Continuous Drain Current1 TC = 25 °C TA= 25 °C(t≦10s) Pulsed Drain Current2 TA= 25 °C(Steady‐State) TC = 100 °C Avalanche Current Avalanche Energy Repetitive Ava
