EMB04N06H Datasheet - Excelliance MOS

EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C 84 ID TC = 100 °C 50 IDM 200 Avalanche Current IAS 65 Avalanche Energy L = 0.1mH, ID=65A, RG.

EMB04N06H Datasheet (340.15 KB)

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Datasheet Details

Part number:

EMB04N06H

Manufacturer:

Excelliance MOS

File Size:

340.15 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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