EMB04N03HR Datasheet, transistor equivalent, Excelliance MOS

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Part number:

EMB04N03HR

Manufacturer:

Excelliance MOS

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204.29kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

EMB04N03HR

Excelliance MOS

📁 Related Datasheet

EMB04N03H - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested .

EMB04N03HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested P.

EMB04N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested .

EMB04N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg .

EMB04N06H - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB04N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100.

EMB04K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 9.5mΩ 30V 4..

EMB04K03HPF - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 9mΩ 30V 4mΩ .

EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2..

EMB02N03HR - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested.

EMB02N03HS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 2.5mΩ ID 100A G UIS, Rg 100% Tested.