EMB04N03HR Datasheet - Excelliance MOS

EMB04N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS, Rg 100% Tested G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS PIN1 SYMBOL EMB04N03HR LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TC = 25 °C ID TC .

EMB04N03HR-ExcellianceMOS.pdf

EMB04N03HR Datasheet Preview — Preview of EMB04N03HR PDF

Datasheet Details

Part number:

EMB04N03HR

Manufacturer:

Excelliance MOS

File Size:

204.29 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB04N03HR EMB04N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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