* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source
MTB04N03E3 Datasheet (259.13 KB)
MTB04N03E3
CYStech Electronics
259.13 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7
N-Channel Enhancement Mode Power MOSF.
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