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MTB04N03E3 - N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

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Datasheet Details

Part number	MTB04N03E3
Manufacturer	CYStech Electronics
File Size	259.13 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB04N03E3-CYStechElectronics.pdf

MTB04N03E3 Product details

Features

Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Cur.

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Published: Oct 26, 2016 |