MTB04N03E3 - N-Channel Enhancement Mode Power MOSFET
MTB04N03E3 Features
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate D：Drain S：Source
