B1236 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High

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Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30p

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Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor BTB1236AFP Spec. No. : C854FP Issued Date : 2011.09.13 Revised Date : Page No. : 1/

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor BTB1236AK3 Spec. No. : C854K3 Issued Date : 2012.10.08 Revised Date : Page No. : 1/

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor Spec. No. : C854A3 Issued Date : 2004.07.28 Revised Date : Page No. : 1/4 BTB1236A

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C854L3 Issued Date : 2004.07.28 Revised Date : Pag

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Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Pag

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.

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Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30p

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C854E3 Issued Date : 2004.07.28 Revised Date : Pag

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CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor BTB1236AI3 Spec. No. : C315I3 Issued Date : 2012.01.16 Revised Date : 2017.12.08 Pa

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CYStech Electronics Corp. Spec. No. : C854J3 Issued Date : 2010.12.31 Revised Date : 2017.05.11 Page No. : 1/6 Silicon PNP Epitaxial Planar Transist

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isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency.

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