4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-chann.
PHB4N60E - PowerMOS transistors Avalanche energy rated
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St.B4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t.SLB4N60C - N-Channel MOSFET
SLB4N60C / SLI4N60C SLB4N60C / SLI4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s.ANB4N60B - N-Chanel Power MOSFET
N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications SMPS PFC.FQB4N60 - 600V N-Channel MOSFET
FQB4N60 / FQI4N60 April 2000 QFET FQB4N60 / FQI4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.TSB4N60M - N-Channel MOSFET
TSB4N60M / TSI4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. .DFB4N60 - N-Channel MOSFET
www.DataSheet4U.com DFB4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica.BRB4N60 - N-CHANNEL MOSFET
BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS 。N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,。 Low gate charge, .