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TSB4N60M - N-Channel MOSFET

TSB4N60M Product details

Description

This Power.

Features

  • 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Puls.

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Datasheet Details

Part number
TSB4N60M
Manufacturer
Truesemi
File Size
228.67 KB
Datasheet
TSB4N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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