TSB4N60M Datasheet (Truesemi)

TSB4N60M, N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSB4N60M Features

* 4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V

* Low gate charge ( typical 16nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise note