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TSB11N60S

N-Channel MOSFET

TSB11N60S Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.38Ω

* Ultra Low Gate Charge (typ. Qg = 35nC)

* 100% avalanche tested

* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSB11N60S General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSB11N60S Datasheet (922.39 KB)

Preview of TSB11N60S PDF

Datasheet Details

Part number:

TSB11N60S

Manufacturer:

Truesemi

File Size:

922.39 KB

Description:

N-channel mosfet.

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TSB11N60S N-Channel MOSFET Truesemi

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