TSB20N60S Datasheet - Truesemi

N-Channel MOSFET

TSB20N60S Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low Gate Charge (typ. Qg = 63nC)

* 100% avalanche tested

* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage D

TSB20N60S General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSB20N60S Datasheet (928.57 KB)

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TSB20N60S

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Truesemi

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928.57 KB

Description:

N-channel mosfet.

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TSB20N60S N-Channel MOSFET Truesemi

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TSB20N60S Features

TSB20N60S General Description

Datasheet Details

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