TSB20N65S Datasheet - Truesemi

TSB20N65S N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSB20N65S Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low Gate Charge (typ. Qg = 63nC)

* 100% avalanche tested

* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage D

TSB20N65S Datasheet (928.63 KB)