Part number:
TSB10N60M
Manufacturer:
Truesemi
File Size:
288.55 KB
Description:
N-channel mosfet.
Datasheet Details
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices
TSB10N60M Features
* - 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
Datasheet Details
TSB10N60M
Truesemi
288.55 KB
N-channel mosfet.
📁 Related Datasheet
📌 All Tags