TSB10N60M Datasheet - Truesemi

TSB10N60M, N-Channel MOSFET

TSB10N60M / TSI10N60M TSB10N60M / TSI10N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

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TSB10N60M-Truesemi.pdf

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Datasheet Details

Part number:

TSB10N60M

Manufacturer:

Truesemi

File Size:

288.55 KB

Description:

N-Channel MOSFET

Features

* - 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSB10N60M Distributors

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TSB10N60M N-Channel MOSFET Truesemi

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