Datasheet Details
- Part number
- TSB10N65M
- Manufacturer
- Truesemi
- File Size
- 315.01 KB
- Datasheet
- TSB10N65M-Truesemi.pdf
- Description
- N-Channel MOSFET
TSB10N65M Description
TSB10N65M / TSI10N65M TSB10N65M / TSI10N65M 650V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
TSB10N65M Features
* - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
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