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TSB10N65M - N-Channel MOSFET

TSB10N65M Description

TSB10N65M / TSI10N65M TSB10N65M / TSI10N65M 650V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

TSB10N65M Features

* - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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Datasheet Details

Part number
TSB10N65M
Manufacturer
Truesemi
File Size
315.01 KB
Datasheet
TSB10N65M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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