TSB10N60S Datasheet - Truesemi

TSB10N60S N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSB10N60S Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.42Ω

* Ultra Low Gate Charge (typ. Qg = 35nC)

* 100% avalanche tested

* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSB10N60S Datasheet (934.89 KB)