TSB10N60S - N-Channel MOSFET

Product Overview

Truesemi

Datasheet Details

Part number	TSB10N60S
Manufacturer	Truesemi
File Size	934.89 KB
Description	N-Channel MOSFET
Datasheet	TSB10N60S Datasheet
Additional preview pages of the TSB10N60S datasheet.

Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.42Ω.
Ultra Low Gate Charge (typ. Qg = 35nC).
100% avalanche tested.
Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB10N60S 9.5.
8.
IDM Drain Current - Pulsed (Note 1) 40.
VGSS Gate-Source voltage EAS.

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Published: Apr 12, 2017 |