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TSB12N60M

N-Channel MOSFET

TSB12N60M Features

* - 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSB12N60M General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices .

TSB12N60M Datasheet (316.43 KB)

Preview of TSB12N60M PDF

Datasheet Details

Part number:

TSB12N60M

Manufacturer:

Truesemi

File Size:

316.43 KB

Description:

N-channel mosfet.

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TSB12N60M N-Channel MOSFET Truesemi

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