SavantIC Semiconductor www.DataSheet4U.com Produc.
2SB631 - PNP/NPN Epitaxial Planar Silicon Transistor
Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe.2SB631K - PNP/NPN Epitaxial Planar Silicon Transistor
Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe.Q62702-B631 - Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications e.KTB631K - EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A. .B631K - 2SB631K
www.DataSheet4U.com Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Ampli.2SB631 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co.2SB631K - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co.CSB631 - PNP PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-126 (SOT-32) Plastic Package www.DataSheet4U.com CSB631, CSB631K C.CSB631K - PNP PLASTIC POWER TRANSISTORS
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-126 (SOT-32) Plastic Package www.DataSheet4U.com CSB631, CSB631K C.B631 - 2SB631
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co.HB631-1 - 10BASE-T Single Port Ethernet Magnetics Module
10BASE-T Single Port Ethernet Magnetics Module HB6xx-Schematic #7, Rev. C 02 Oct 00 (xx equals one of the circuit numbers in the table below the sch.2SB631 - PNP / NPN Epitaxial Planar Silicon Transistors
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic.2SB631K - PNP / NPN Epitaxial Planar Silicon Transistors
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic.2SB631K - Silicon PNP transistor
2SB631K Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features ,,; 2SD600K 。 .ERHB631LGC102MD85U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.ERHB631LGC122MD95U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.ERHB631LGC152MDB5U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.ERHB631LGC152ME85U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.ERHB631LGC182MDC5U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.ERHB631LGC182ME95U - LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS
LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.(575 to 700Vdc.