B631 Datasheet | Specifications & PDF Download

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co

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www.DataSheet4U.com Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Ampli

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic

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10BASE-T Single Port Ethernet Magnetics Module HB6xx-Schematic #7, Rev. C 02 Oct 00 (“xx” equals one of the circuit numbers in the table below the sch

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BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications e

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Co

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

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Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-126 (SOT-32) Plastic Package www.DataSheet4U.com CSB631, CSB631K C

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applic

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good

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Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Fe

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SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES High breakdown voltage VCEO 120V, high current 1A.

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

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PRELIMINARY CB6318 3300 to 3600 MHz Wide Instantaneous Bandwidth High-Efficiency Power Amplifier DESCRIPTION CB6318 is a highly efficient, wide insta

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

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LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

(5 views)

LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85℃ RHBSeries ・Realized higher voltage than RWE series.（575 to 700Vdc

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) ·Good

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