B817 Datasheet | Specifications & PDF Download

PHOTOCOUPLER KB817-B GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES FEATURES 1.Lead forming (gull wing) type, for

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PHOTOCOUPLER KB817 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input

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www.DataSheet4U.com Ordering number : ENA0188 2SB817C / 2SD1047C www.DataSheet4U.com 2SB817C / 2SD1047C Features • • • PNP Epitaxial Planar Silico

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KSB817 KSB817 Audio Power Amplifier Car Booster Output Amplifier DC to DC Converter • High Current Capability • High Power Dissipation • Complementar

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Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Outpu

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www.DataSheet4U.com Ordering number : ENA0188 2SB817C / 2SD1047C 2SB817C / 2SD1047C Features • • • PNP Epitaxial Planar Silicon Transistor NPN Trip

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PNP Transistor KSB817 datasheet www.semicon-data.de Free Datasheet http://www.nDatasheet.com PNP Transistor KSB817 datasheet www.semicon-data.de

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Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Ap

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Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance

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Slotted Optical Switch OPB817Z Features:  0.20” (5.08 mm) wide gap, 0.86” (21.84 mm) deep slot  24” (609 mm) 26 AWG wires  Dust protection  Two mo

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OSD1074&OSB817 http://www.osen.net.cn NPN/PNP Complementary Silicon Power Transistors  Features：  High efficiency,low deviation ，  Small input i

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Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Ap

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capabi

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Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, applicatio

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817C DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A ·Goo

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817E DESCRIPTION ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Line

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047. Recommended for 60W Audio Frequency Amplifier Output

Rating: 1 ★ (1 votes)