B863 Datasheet | Specifications & PDF Download

FUJITSU SEMICONDUCTOR DATA SHEET www.DataSheet4U.com DS07-03108-2E Processor Digital Signal Processor CMOS 16-bit Fixed-point DSP MB86330 s DESCRI

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FUJITSU SEMICONDUCTOR DATA SHEET www.DataSheet4U.com DS04-26903-3E ASSP CMOS Dolby Digital (AC-3) Decoder LSI MB86342B s DESCRIPTION Dolby Digital

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD1148 APPLICATIONS

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www.DataSheet4U.com MPEG2 1chip Audio/Video Encoder MB86391 Product Specification Revision 1.1 12, November 2001 Copyright © FUJITSU LIMITED ALL RI

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FDB86363_F085 N-Channel PowerTrench® MOSFET FDB86363_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 2.4 mΩ June 2014 DD Features „ Typical RDS(on)

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www.DataSheet4U.com www.DataSheet4U.comwww.DataSheet4U.com

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CB863-15 (150V / 2.0A ) HIGH VOLTAGE SCHOTTKY BARRIER DIODE Outline drawings, mm Type name, Voltage class, Lot No. Cathode Mark φ3.0±0.2 www.DataS

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FDB86366_F085 N-Channel PowerTrench® MOSFET FDB86366_F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ December 2014 Features „ Typical RDS(on

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Product Profile MB86393 MPEG-2 Single Chip Audio/Video Encoder www.DataSheet4U.com September 2002 Edition 1.00 FME/MM/PP/0902 OVERVIEW Fujitsu’s MB

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CB863-20 (200V / 2.0A ) HIGH VOLTAGE SCHOTTKY BARRIER DIODE Outline drawings, mm Type name, Voltage class, Lot No. Cathode Mark φ3.0±0.2 www.DataSh

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CB863-12 (120V / 2.0A ) HIGH VOLTAGE SCHOTTKY BARRIER DIODE Outline drawings, mm Type name, Voltage class, Lot No. Cathode Mark φ3.0±0.2 www.DataS

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FDB86360_F085 N-Channel Power Trench® MOSFET FDB86360_F085 N-Channel Power Trench® MOSFET 80V, 110A, 1.8mΩ January 2014 DD Features „ Typ rDS(on) =

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FDB86366-F085 N-Channel PowerTrench® MOSFET FDB86366-F085 N-Channel PowerTrench® MOSFET 80 V, 110 A, 3.6 mΩ Features „ Typical RDS(on) = 2.8 mΩ at V

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: SILICON PNP TRIPLE DIFFUSED TYPE 1 o POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Fre

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type

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SMD Shielded Beads - FB Series FB Series The FB series are surface mount beads that have similar impedance levels as leaded shielded beads with high

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION ·With TO-3P(I) package ·Compleme

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okpac® Relais statique biphasé de puissance Dual Power Solid State Relay → Relais statique synchrone spécialement adapté à la plupart des charges. Zer

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