BAN-001 Datasheet | Specifications & PDF Download

www.DataSheet4U.com LTM9001 16-Bit IF/Baseband Receiver Subsystem DESCRIPTION The LTM®9001 is an integrated System in a Package (SiP) that includes a

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PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUST

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www.DataSheet4U.com DataSheet4U.com e DataShe DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com

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PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers

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Data Sheet Low Noise, Low Input Bias Current, Rail-to-Rail Output, JFET Dual Operational Amplifier ADA4001-2 10375-002 FEATURES Low TCVOS: ±5 µV/°C

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MASW-009359 GaAs Broadband High Power SP3T Switch DC - 4.0 GHz Features  CDMA Handset Switching Applications  Balanced (symmetrical) RF Ports  Low

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LN1001 Four segment indicator, single-chip Power Bank dedicated IC ■ General Description LN1001 includes a programmable high efficiency BUCK charger

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DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2001012-24

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www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wi

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4 Way High Power Broadband Combiner From 2 GHz to 6 GHz Rated at 400 Watts, Type N TECHNICAL DATA SHEET PE20S0017 PE20S0017 is a passive 4 way High

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PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers

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www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wi

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Product Overview The DWM1001 module is based on Decawave's DW1000 Ultra Wideband (UWB) transceiver IC, which is an IEEE 802.15.42011 UWB implementatio

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CONNECTORIZED MODULES - AMPLIFIERS v03.1007 9 Typical Applications The HMC-C001 Wideband LNA is ideal for: • Telecom Infrastructure • Microwave Radio

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Miniature Broadband Gain Stage 200 - 3000 MHz V 4.00 MAALSS0012 Features Functional Block Diagram Vdd Cdd Ldd RF OUT PIN 6 GND GND Low No

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www.DataSheet4U.com 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1001 Chip Device Layout Features Balanced Design Excell

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