BD1 Datasheet | Specifications & PDF Download

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−F

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min

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SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

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BetaTHERM Sensors Photo? Interchangeable mini-BetaCURVE Probe Interchangeable mini-BetaCURVE Probe: Applications: ¥ Reduced size allows localized tem

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136,

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD131 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Vo

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(M

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 HBD140 PNP POWER

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD136/D Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio am

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD162 DESCRIPTION ·Continuous Collector Current -IC= 4A ·Excellent Safe Operating Area ·Good

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