BD1 Datasheet | Specifications & PDF Download

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) P

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Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL (Moisture Sensitiv

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Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty

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SSBD10L100CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×5A 100V 150℃ 0.7V TO220 SSBD10L100CT Features and Benefits:  High Junct

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PRELIMINARY DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11UD8ABFB (128M words × 64 bits, 2 Banks) Description The EBD11UD8ABFB is 128M words × 64 bit

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IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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SBD10C100T/F_Datasheet 10A, 100V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C100T/F is schottky rectifier fabricated in silicon epitaxial planar tech

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Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 V = 1200 V CES IC25 = 70 A VCE(sat) = 3.3 V =tfi(ty

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min

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isc Silicon NPN Power Transistor BD159 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(M

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Features ● 0.56 inch digit height ● Robust package ● Low power consumption ● Standard configuration: Gray face w/ white segments ● Standard Package: 4

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& UNIVERW. llllCROELECTRONICS CO., LTD. ACTIVE DELAY LINES AD1480 SERIES: 14-PIN DIL 10-TAP EQUALLY-SPACED FEATURES: •Compatible with TTL Circuits e

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IXDP 20N60B D1 High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 32 A V = CE(sat) typ 2.2 V C TO-220

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SSBD10L100CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×5A 100V 150℃ 0.7V TO220 SSBD10L100CT Features and Benefits:  High Junct

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SMD Schottky Barrier Rectifier COMCHIP www.comchip.com.tw CDBD1530 Thru CDBD1560 Reverse Voltage: 20 - 60 Volts Forward Current: 15.0 Amp Features

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) ·Minimum Lot-to-Lot variations for robust dev

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