BD301 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor BD301 DESCRIPTION ·DC Current Gain - : hFE =30(Min.)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(

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BD301N THRU BD301P 30 AMP BLOCK DIODES FEATURES ..High current capability ..High voltage available ..Glass passivated die construction ..High surge

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LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF d

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BD301N THRU BD301P 30 AMP BLOCK DIODES FEATURES ..High current capability ..High voltage available ..Glass passivated die construction ..High surge

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LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF d

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MMBD301M3T5G Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is d

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UPM Features * Low Capacitance: 1.5 pF (Max) at VR=15V * Very Low VF: 0.36V (Typ) at IF = 1mA * Extremely Fast Switching Speed MMBD301 SURFACE MOUNT

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MMBD301M3 Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is desi

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SMD Type Schottky Barrier Diode MMBD301 Diodes Features +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Switching Diode Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This switching d

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MMBD1010LT1 Switching Diode Part of the GreenLine™ Portfolio of devices with energy−conserving traits. This switching diode has the following features

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MMBD301 Features • High Efficiency UHF and VHF Detector Applications. • Low Capacitance and Low Reverse Leakage • Extremely Low Minority Carrier Life

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MMBD301 Schottky Barrier Diode SOT-23 Features — Surface mount package ideally suited for automatic insertion. Applications — Sourced from process GD

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD301 SCHOTTKY BARRIER DIODE FEATURES  Small Surface Mounting

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MMBD301 3 DISCRETE POWER AND SIGNAL TECHNOLOGIES CONNECTION DIAGRAM 3 PACKAGE SOT-23 TO-236AB (Low) 1 4T 1 2 NC SOT-23 TO236AB 2 PACKAGE Schottk

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD301/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed

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www.DataSheet4U.com MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for

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