BDV65 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDV65B/D Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B DARLINGTON

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC

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BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier

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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designe

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type

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BDV64 (PNP) & BDV65 (NPN) Silicon Complementary Transistors Darlington Power Amp, Switch TO−3PN Type Package Description: The BDV64 (PNP) and BDV65 (

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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designe

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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designe

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC

(9 views)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC

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BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designe

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BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio outpu

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BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio outpu

(6 views)

BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio outpu

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BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio outpu

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