BELLING BLM Datasheet | Specifications & PDF Download

Pb Free Product BLM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3401 uses advanced trench technology to provide excellent RDS(ON),

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Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The BLM4407 uses advanced trench technology to provide excellent RDS(

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Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4435 uses advanced trench technology to provide excellent RDS(ON)

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Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION The BLM04N06 uses advanced trench technology to provide excellent RDS(ON), low gate ch

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Pb Free Product BLM2004NE N-Channel Enhancement Mode Power MOSFET Description The BLM2004NE uses advanced trench technology to provide excellent RDS

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N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench technology to provide excellent RDS

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Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3401A uses advanced trench technology to provide excellent RDS(ON

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Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET Description The BLM2008E uses advanced trench technology to provide excellent RDS(ON

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Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate c

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Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION The BLM04N08 uses advanced trench technology to provide excellent RDS(ON), low gate ch

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Pb Free Product BLM138K N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10

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Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description The BLM8205 uses advanced trench technology to provide excellent RDS(ON)

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ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent RDS(ON),

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Pb Free Product BLM7002 N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10

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Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4953A uses advanced trench technology to provide excellent RDS(ON

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Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4953 uses advanced trench technology to prov ide excellent RDS(ON)

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Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(O

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Pb Free Product BLM2312 N-Channel Enhancement Mode Power MOSFET Description The BLM2312 uses advanced trench technology to provide excellent RDS(ON),

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Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description The BLM8205B uses advanced trench technology to provide excellent RDS(O

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Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide excellent RDS(ON),

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