BS170 Datasheet | Pinout, Features, Price Comparison & PDF

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are p

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS170/D TMOS FET Switching N–Channel — Enhancement 1 DRAIN BS170 2 GATE 3 SOURCE ® M

BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 S Type BS 170 Type BS 170 Pin 2

N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device

BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Uni

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2 at VGS = 10 V 60 4 at VGS = 4.5 V VGS(th) (V)

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5Ω BS170F S D PARTMARKING DETAIL – MV G

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor G

BS170 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switc

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(B

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω BS170P REFER TO ZVN3306A FOR GRAPHS ABSOLUTE MAX

BS170F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V ID Max TA = +25°C 0.15A Description

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 19

BS170 MOSFET N−Ch, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . .

BS170FTA www.VBsemi.com BS170FTA Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V SOT-23 G1 ID