BUZ20 Datasheet | Specifications & PDF Download

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BUZ20LF N-CHANNEL 100V - 0.20Ω - 13.5A Power MOSFET TYPE BUZ20LF VDSS 100 V RDS(on) 0.20Ω ID 13.5A [BUZ20LF ] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 1

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SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) 1.0 Ω Package 1) TO-220 AB O

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BUZ 20 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 20 VDS 100 V ID 13.5 A RDS

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SIPMOS ® Power Transistor BUZ 20 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Or

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio

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isc N-Channel Mosfet Transistor BUZ20 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·SOA is Power Dissipation Limited ·High inp

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BUZ20 Semiconductor Data Sheet October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET Features • 12A, 100V [ /Title This i

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isc N-Channel Mosfet Transistor BUZ202 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·SOA is Power Dissipation Limited ·High in

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isc N-Channel Mosfet Transistor BUZ201 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·SOA is Power Dissipation Limited ·High in

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Semiconductor Data Sheet BUZ20 October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power Features [ /Title (BUZ20 ) /Subject MOSFET

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.~ .~L S~DG©OOS@~-1[lHJ~O©'iMJOSO@O~DN©~ BUZ20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ20 Voss 100 V ROS(on) 0.2 Q 10 12 A •

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