Berex Datasheet | Specifications & PDF Download

BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1

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Low Loss / Fast Switching SPDT RF switch BSW7221 5MHz-8500MHz Product Descrip on The BSW7221 is a reflec ve SPDT RF switch that can be used in high p

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7-bit Digital Step Attenuator Device Features • 7-bit Serial & Parallel Interface • 31.75 dB Control Range 0.25 dB step • Glitch-safe attenuation stat

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BLB04 2500 – 5000 MHz High Linearity LNA Device Features • Operated at 3.3V and 5.0V • 33.0dBm Output IP3 at 0dBm/tone at 3600MHz • 18.0dB Gain at 36

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BBA31 50-5000 MHz Flat Gain BroadBand AMP Preliminary Datasheet Device Features • Gain = 14.8 dB @ 900MHz • OIP3 = 40.8 dBm @ 900 MHz • Output P1 dB

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2.4GHz Bluetooth® Smart Front End RFIC 8TR8211C 2.4 - 2.525GHz Features • 2.4 - 2.525GHz Frequency Range • High Functionality Front-End RF Integrate

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BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate DSA to AMP Functionality • 500-8000MHz

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BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BT33L 100-1000MHz 1.5W ~ 2.0W High Linearity 5V Power Amplifier Device Features • OIP3 = 48.5dBm @ 700 MHz • Gain = 22.0 dB @ 700 MHz • Output P1 dB

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BLB02 1500 – 2700 MHz High Linearity LNA Device Features Part Marking (XX:Wafer number) • Internally matched to 50 ohms • Operated at 3.0V and 5.0V

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2.4GHz Bluetooth® Smart Front End RFIC 8TR8211 2.4 - 2.5GHz Features • 2.4 - 2.5GHz Frequency Range • High Functionality Front-End RF Integrated Cir

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High Linearity / Fast Switching SPDT RF switch BSW6321 5MHz-6000MHz Product Description The BSW6321 is a reflective SPDT RF switch that can be used

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6-bit Digital Step Attenuator BDA4601 1MHz– 4000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control Range 0.5 dB step • No pos

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BCP030C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate) The BeRex BCP030T-70 is a GaAs Power pHEMT in an industry standard, 70 mils.

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BG11C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 30.0 dBm @ 1900 MHz • Gain = 20.8 dB @ 1900 MHz • Output P1 = 17.3 dBm @19

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BT09E 500-4000 MHz Wideband Medium Power Amplifier Device Features • Output P1 dB = 25.2 dBm @ 1900 MHz • Gain = 18.7 dB @ 1900 MHz • LTE 20MHz ACLR

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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr

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BT05CV 5-4000 MHz Wideband Drive Amplifier Device Features • OIP3 = 43.5 dBm @ 900 MHz • Gain = 21.5 dB @ 900 MHz • Output P1 dB = 23.9 dBm @ 900 MHz

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6-bit Digital Step Attenuator BDA4620 1MHz – 6000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control Range 0.5 dB step • Glitc

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High linearity Flat Gain Digital Variable Gain Amplifier BVA7242 3000MHz – 4200MHz Device Features • Integrated AMP1 + DSA + AMP2 • Frequency Range

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