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BNT02 - BroadBand AMP
BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1.BCP120C - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr.BG11C - Cascadable InGaP HBT Gain Block
BG11C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 30.0 dBm @ 1900 MHz • Gain = 20.8 dB @ 1900 MHz • Output P1 = 17.3 dBm @19.BGS1 - SILICON GERMANIUM Gain Block
BGS1 50-4000 MHz SILICON GERMANIUM Gain Block Device Features • 3 ~ 3.2V supply • No Dropping Resistor Required • No matching circuit needed • Green/.BVA2182 - DUAL DIGITAL VARIABLE GAIN AMPLIFIER
DUAL DIGITAL VARIABLE GAIN AMPLIFIER BVA2182 0.5GHz — 3.8GHz Device Features • 48Pin 7 x 7 x 0.9mm QFN Package • Integrates Amp1(Gain Block), DSA1 .BVA1762 - Ultra Flat Gain wideband DVGA
BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate DSA to AMP Functionality • 500-8000MHz.BG14B - Cascadable InGaP HBT Gain Block
BG14B 5-6000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 35.0 dBm @ 1900 MHz • Gain = 16.0 dB @ 1900 MHz • Output P1 dB = 19.5 dBm @.BT09AG - Wideband Medium Power Amplifier
BT09AG 5-4000 MHz Wideband Medium Power Amplifier Device Features • OIP3 = 43.0 dBm @ 900 MHz • Gain = 20.0 dB @ 900 MHz • Output P1 dB = 24.5 dBm @ .BL083 - Wideband Low Nosie Amplifier
BL083 50-4000 MHz Wideband Low Nosie Amplifier Device Features • This can be operated at Vd of 3.0V • N.F = 0.78 dB @ 1850MHz at Demo board • 31.5 dB.BVA3143 - Medium Power Digital Variable Gain Amplifier
Medium Power Digital Variable Gain Amplifier BVA3143 3300MHz – 3800MHz Product Description The BVA3143 is a digitally controlled variable gain ampli.BSW722T - Thin Package SPDT RF switch
Thin Package SPDT RF switch BSW722T 5MHz-6000MHz Product Description The BSW722T is a reflective SPDT RF switch that can be used in high power and g.BDA4700 - 7-bit Digital Step Attenuator
7-bit Digital Step Attenuator Device Features • 7-bit Serial & Parallel Interface • 31.75 dB Control Range 0.25 dB step • Glitch-safe attenuation stat.BSW6440 - High Isolation Absorptive SP4T RF Switch
High Isolation Absorptive SP4T RF Switch BSW6440 50MHz-6000MHz Product Description The BSW6440 is an absorptive SP4T 50Ω matched RF switch supportin.BCL016B-343 - SUPER LOW NOISE PHEMT
BCL016B-343 SUPER LOW NOISE PHEMT IN SOT-343 PACKAGE The BeRex BCL016B-343 is a GaAs super low noise pHEMT in a standard SOT-343 plastic package. It.BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.BVA2140 - 0.7-4GHz 1/4W Medium Power DIGITAL VARIABLE GAIN AMPLIFIER
BVA2140 0.7- 4GHz 1/4W Medium Power DIGITAL VARIABLE GAIN AMPLIFIER Device Features • Small 24-Pin 4 x 4 mm QFN Package • Integrate Amp1 to DSA and D.BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.BGS2 - 50 - 4000-MHz SILICON GERMANIUM Gain Block
BGS2 50-4000 MHz SILICON GERMANIUM Gain Block Device Features • Single Fixed 3V supply • No Dropping Resistor Required • No matching circuit needed •.BD2626 - Dual Band 2-Way SMT Power Divider
BD2626 Dual Band 2-Way SMT Power Divider 2400~2900MHz WCDMA, WiBro & LTE Device Features Typical Isolation = 25.0 dB Typical Insertion Loss = 0.6.