C2612 Datasheet | Specifications & PDF Download

LTC2602/LTC2612/LTC2622 Dual 16-/14-/12-Bit Rail-to-Rail DACs in 8-Lead MSOP W U FEATURES ■ Smallest Pin-Compatible Dual DACs: LTC2602: 16-Bits LTC2

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PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an as

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2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (T

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MOSFET – N-Channel, POWERTRENCH) 200 V FDC2612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficie

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2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Fl

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FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate ps

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION ·With TO-220 package ·High coll

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www.DataSheet4U.com 500kHz Step-Down DC/DC Converter SC2612E POWER MANAGEMENT Description The SC2612E is a voltage mode switcher designed for low co

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturatio

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600kHz/200kHz www.DataSheet4U.com Step-Down DC/DC Converter POWER MANAGEMENT Description The SC2612 is a voltage mode switcher designed for low cost,

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600kHz/200kHz www.DataSheet4U.com Step-Down DC/DC Converter POWER MANAGEMENT Description The SC2612 is a voltage mode switcher designed for low cost,

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www.DataSheet.co.kr Ordering number : ENA0656 VEC2612 SANYO Semiconductors DATA SHEET VEC2612 Features • • N-Channel and P-Channel Silicon MOSFE

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EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612-99F is based on a 0.15µm gate pseudomor

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