COMPLEMENT Datasheet | Specifications & PDF Download

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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DATA SHEET NPN MPS6512 MPS6513 MPS6514 MPS6515 PNP MPS6516 MPS6517 MPS6518 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION

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NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch Absolute Maximum Ratings: (TA = +2

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

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NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium com

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MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk

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NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon

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SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 N-ch D2 D1 D1 G2 S2 BV ID DSS +30V 50mΩ +5A -30

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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www.DataSheet4U.com NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE1

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TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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BD6xxx Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integr

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HCC4007UB HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER . . . . . . STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPHL, t

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CMPT8099 NPN CMPT8599 PNP COMPLEMENTARY SILICON TRANSISTOR Central Semiconductor DESCRIPTION: TM Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBO

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