BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC.
ETC
JCS2N60 - N-channel enhancement mode Field-Effect Transistor
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ETC
JCS2N60 - N-channel enhancement mode Field-Effect Transistor
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS2N60C - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS2N60U - N-channel enhancement mode Field-Effect Transistor
R N JCS2N60 U/I ◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt ◆ ◆ ◆UPS JCS2N60U/I N ， VDMOS 。， ， 。 (，Tc=25℃) － VDSS .
JILIN SINO-MICROELECTRONICS
JCS2N60 - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS2N60R - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS2N60F - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
JILIN SINO-MICROELECTRONICS
JCS2N60T - N-CHANNEL MOSFET
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package LED Crss ( 3.8pF) dv/dt R.
INCHANGE
JCS2N60F - N-Channel MOSFET
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche .
LZG
CS2N60 - N-CHANNEL MOSFET
BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
Huajing Microelectronics
CS2N60FA9H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS2N60F A9H ○R General Description： VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is o.
Huajing Microelectronics
CS2N60A4T - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS2N60 A4T ○R General Description： CS2N60 A4T, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
ETC
JCS2N60 - N-channel enhancement mode Field-Effect Transistor
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package LED APPLICATIONS High .
ETC
CS2N60F - VDMOS Transistor
CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2. .
LZG
CS2N60F - N-CHANNEL MOSFET
BRF2N60(CS2N60F) : DC/DC 。 N-CHANNEL MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switc.
HUAJING
CS2N60F - Silicon N-Channel Power MOSFET
Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Te.
JILIN SINO-MICROELECTRONICS
JCS2N60I - N-channel enhancement mode Field-Effect Transistor
R N JCS2N60 U/I ◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt ◆ ◆ ◆UPS JCS2N60U/I N ， VDMOS 。， ， 。 (，Tc=25℃) － VDSS .
JILIN SINO-MICROELECTRONICS
JCS2N60C - N-CHANNEL MOSFET
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package LED Crss ( 3.8pF) dv/dt R.
CR Micro
CS2N60B23HP - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS2N60 B23HP General Description： VDSS 600 V CS2N60 B23HP, the silicon N-channel Enhanced ID 1.5 A VDMOSFE.
Huajing Microelectronics
CS2N60A3H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt.