CS2N60 Datasheet | Specifications & PDF Download

N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package    LED  Crss ( 3.8pF)    dv/dt R

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

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Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Te

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R N JCS2N60 U/I ◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt ◆ ◆ ◆UPS JCS2N60U/I N ， VDMOS 。， ， 。 (，Tc=25℃) － VDSS

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R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package    LED  Crss ( 3.8pF)    dv/dt R

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Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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Silicon N-Channel Power MOSFET CS2N60 A4H ○R General Description： VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obt

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CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

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Silicon N-Channel Power MOSFET ○R CS2N60 A4RZ-G General Description： CS2N60 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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Silicon N-Channel Power MOSFET ○R CS2N60 A4HY General Description： CS2N60 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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Silicon N-Channel Power MOSFET ○R CS2N60 A4R General Description： CS2N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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Silicon N-Channel Power MOSFET ○R CS2N60 B23HP General Description： VDSS 600 V CS2N60 B23HP, the silicon N-channel Enhanced ID 1.5 A VDMOSFE

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