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4H11G - Complementary Power Transistors
4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi.NA11 - 1 Amp complementary power transistors
~ ~------------------------------------------------------------------------, - a0.. Z ~National 0.. ,N SemiconductorBD777 - DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45/ 60/ 80 VOLTS 15 WATTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for .NSM21356DW6T1G - Dual Complementary Transistors
NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains .TIP41CG - Complementary Silicon Plastic Power Transistors
Complementary Silicon Plastic Power Transistors TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Designed for use in.BPM0405CG - 40V Complementary MOSFET
General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be .BD243B - COMPLEMENTARY SILICON POWER TRANSISTORS
® BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C .2N6609 - COMPLEMENTARY SILICON POWER TRANSITORS
Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .MUN5335DW1 - Complementary Bias Resistor Transistors
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias .NSBC143EPDP6 - Complementary Bias Resistor Transistors
Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW NPN and PNP Transistors with Monolithic Bias Resistor Network MUN5332DW1, NSBC143EPD.TIP35C - Complementary power transistors
TIP35C TIP36C Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications .2N6715 - COMPLEMENTARY SILICON POWER TRANSISTORS
2N6714 2N6715 NPN 2N6726 2N6727 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCT.MJ14002 - 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ14001/D High-Current Complementary Silicon Power Transistors . . . designed for use .NH15002 - 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15001/D Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase .NTE4082B - (NTE40xxB) Complementary Metal Oxide Silicon
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U . m o c .TIP36 - Complementary Silicon Power Transistors
TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTIO.TIP140 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION.2N3055 - Complementary Silicon Power Transistors
Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a.DMC2004LPK - COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMC2004LPK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VG.UMC4N - DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
UMC4N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features • • • • • Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assem.