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A2SHB - N-Channel MOSFET
3.7A, 20V N N N-Channel Enhancement Mode Field Effect Transistor SMD Features ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design fo.A1SHB - P-Channel Enhancement Mode Power MOSFET
MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char.RM9003B - Single channel constant current LED controller
LED constant current control chip RM9003B General Description : RM9003B is a one_stage LED constant current driving control chip which Compatible wit.B20N03 - N-Channel MOSFET
CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, .PF7708B - Single Channel WLED Driver
PF7708B Single Channel WLED Driver with Integrated Dimming MOSFET Preliminary Specification P4 FEATURES Wide Input Range: 9V to 30V Curre.A09T - 30V N-CHANNEL MOSFET
A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET Features: Fast switching speed High input impedance and low level drive Improved dv/dt c.CS150N03 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description: CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr.A1SHB - P-Channel Trench Power MOSFET
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.P60NF06 - N-CHANNEL Power MOSFET
STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except.RU6888R - N-Channel Advanced Power MOSFET
RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab.CS630A4H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS630 A4H ○R General Description: CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R.B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.A19T - P-Channel Enhancement Mode Power MOSFET
RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge .HY4008 - N-Channel MOSFET
HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.2SK674 - N-Channel MOSFET
Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 .4N90C - N-Channel MOSFET
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan.K8A60DA - Silicon N-Channel MOSFET
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • Low drain-source ON resistan.ONET2804T - 28-Gbps 4-Channel Limiting TIA
Product Folder Order Now Technical Documents Tools & Software Support & Community ONET2804T SLLSEK1B – JULY 2014 – REVISED MARCH 2018 ONET2804T 2.