D1047 Datasheet | Specifications & PDF Download

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized

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2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized

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Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Ap

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isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren

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Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Ap

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Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transist

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KSD1047 KSD1047 Audio Power Amplifier DC to DC Converter • High Current Capability • High Power Dissipation • Complement to KSB817 1 TO-3P 1.Base 2

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isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Li

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www.DataSheet4U.com Ordering number : ENA0188 www.DataSheet4U.com 2SB817C / 2SD1047C 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency Amplifier Outpu

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m o .c Continental Device India Limited U An IS/ISO 9002 and IECQ Certified Manufacturer 4 t e e NPN POWER TRANSISTOR h S a t a D . w w B w C E IS/IS

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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output

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Inlet Filters for Vacuum Pumps & Blowers KD SERIES OIL SPARATORS Also being imported from Europe, mainly for used for lubricated vacuum pumps such a

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