D1407 Datasheet | Specifications & PDF Download

Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

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Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (4 votes)

Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (3 votes)

Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (3 votes)

Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (3 votes)

Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (2 votes)

19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

Rating: 1 ★ (2 votes)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm • High breakdo

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www.DataSheet4U.com 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE M

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Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0

Rating: 1 ★ (1 votes)

:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage :

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www.DataSheet4U.com SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High b

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isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo

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