2SD1407 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1407 .
Low Collector Saturation Voltage : VCE(sat)= 2. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Complement t.

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Datasheet Specifications

Part number: 2SD1407
Manufacturer: INCHANGE
File Size: 206.45 KB
Datasheet: 2SD1407-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC

2SD1407 Distributors

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2SD1407 NPN Transistor INCHANGE

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