D1802 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor MD1802FX DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SU

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www.DataSheet4U.com www.DataSheet4U.com MD1802FX High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General fea

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Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications · Voltage regu

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www.DataSheet4U.com MD1802FX High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General features ■ ■ ■ ■ ■ ■ ■

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www.DataSheet4U.com MD1802FH High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General features ■ ■ ■ ■ ■ ■ ■

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Production specification NPN Epitaxial Planar Silicon Transistors 2SD1802 FEATURES  Adoption of FBET,MBIT processes. Pb  Large current capacit

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TED1802 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIAER APPLICATIONS. FEATURES . High hpE : hFE=106~300 . 1W Output Applications. .

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Transys Electronics LIMITED TO-251/TO-252-2Plastic-Encapsulated Transistors 2SD1802 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃

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UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  DESCRIPTION The UTC 2SD1802 applies to voltage

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Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications · Voltage regu

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www.DataSheet4U.com STD1802 Low voltage fast-switching NPN power transistor Features ■ ■ ■ ■ Very low collector to emitter saturation voltage High c

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1802 PNP general purpose transistor Product specification Supersedes data of 1997 May 27

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STD1802T4-A Low voltage fast-switching NPN power transistor Features ■ This device is qualified for automotive application ■ Very low collector to em

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2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET and MBIT Processes • Large Cur

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2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rat

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www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1802 Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO

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www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Description The GISD1802 applies to vo

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) ·DC Current Gain -h

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