D1N60 Datasheet | Specifications & PDF Download

HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Desi

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Rectifier Diode D1N60 600V 1A • にれ • Feature • High-Reliability • High Voltage アキシャルダイオード Axial Diode ■　OUTLINE Package：AX057 Unit : mm Weight : 0

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo

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Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 0.9 A FEATURES ‰ Originative New Design ‰

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FQD1N60 FQU1N60 FQI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using a

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1.3A, 600V, N H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 80/ 2.5K/ 4Kpcs

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www.DataSheet4U.com DFD2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability

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FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Description This N-Channel enh

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TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe

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FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.onsemi.com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Features • 1 A, 600 V,

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HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 1 A FEATURES ‰ Originative New Design

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BRD1N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge,

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FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr

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AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using a

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SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transist

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isc N-Channel MOSFET Transistor AOD1N60 FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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www.DataSheet.co.kr SAMWIN SW1N60 N-channel MOSFET BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm 1 1 2 2 3 3 1 2 2 3 1 3 Features ■ High ruggedness ■ RDS(

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SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transist

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SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transist

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