D235 Datasheet | Specifications & PDF Download

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237

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-D~ ~5C-c::t\ +~VI u ,. ANALOG +5 V Powered W DEVICES CMOSRS-232Drivers/Receivers FEATURES Single 5 V Power Supply Meets All RS-232-C and V.28 S

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2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.datasheet4u.com Unit: mm • • High DC current

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type

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BD235 BD237 Low voltage NPN power transistors Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching ap

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SLD235VL Index-Guided High Power AlGaAs Laser Diode Preliminary For the availability of this product, please contact the sales office. Description The

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified accordin

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2SD2353 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,VCESAT 。 Hig

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR (NPN) FEATURES Complement to BD234

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BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base

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: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Compl

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200

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Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1

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NPN Epitaxial Planar Transistors P b Lead(Pb)-Free BD233/235/237 1. EMITTER 2. COLLECTOR 3. BASE 1 23 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD

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