Features and Benefits • Glass Passivated Die Con.
Sharp
LK695D3GW35 - TFT LCD Module
RECORDS OF REVISION MODEL No. : LK695D3GW35 SPEC No. : LD-K24913 SPEC No. DATE REVISED No. LD-K24913 2012.9.21 - PAGE - SUMMARY - NOTE 1st I.
Microsemi Corporation
APTGT300DA60D3G - Boost chopper Trench Field Stop IGBT3 Power Module
APTGT300DA60D3G Boost chopper Trench + Field Stop IGBT3 www.DataSheet4U.net Power Module 3 VCES = 600V IC = 300A @ Tc = 80°C Application • AC and DC .
ROHM
RD3G500GN - Power MOSFET
RD3G500GN Nch 40V 50A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 4.9mΩ ±50A 35W lFeatures 1) Low on - resistance 2) High power package (TO-252) 3).
Diodes Incorporated
D3G - 1.0A GLASS PASSIVATED RECTIFIER
Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak •.
Kemet Corporation
C0201C100D3GAC - Surface Mount Ceramic Chip Capacitors
www.DataSheet4U.com Product Bulletin Surface Mount Ceramic Chip Capacitors – C0201 Series - C0G Dielectric Outline Drawing W T L B TIN PLATE S N.
Microsemi Corporation
APTGT400A120D3G - IGBT Power Module
APTGT400A120D3G Phase leg Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 1200V IC = 400A @ Tc = 80°C Application • Welding converte.
Microsemi Corporation
APTGT400A60D3G - IGBT Power Module
APTGT400A60D3G Phase leg Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 600V IC = 400A @ Tc = 80°C Application • Welding converters.
Microsemi Corporation
APTGT400DA120D3G - IGBT Power Module
APTGT400DA120D3G Boost chopper Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 1200V IC = 400A @ Tc = 80°C 3 Application • AC and .
Microsemi Corporation
APTGT400DA60D3G - IGBT Power Module
APTGT400DA60D3G Boost chopper Trench + Field Stop IGBT3 www.DataSheet4U.net Power Module 3 VCES = 600V IC = 400A @ Tc = 80°C Application • AC and DC.
Microsemi Corporation
APTGT400SK120D3G - IGBT Power Module
APTGT400SK120D3G Buck Chopper Trench + Field Stop IGBT Power Module www.DataSheet4U.net VCES = 1200V IC = 400A @ Tc = 80°C Q1 4 5 3 Application • .
Microsemi Corporation
APTGT400SK60D3G - IGBT Power Module
APTGT400SK60D3G Buck Chopper Trench + Field Stop IGBT3 www.DataSheet4U.net Power Module 3 VCES = 600V IC = 400A @ Tc = 80°C Q1 4 5 Application • AC.
ROHM
RD3G600GN - Power MOSFET
RD3G600GN Nch 40V 60A Power MOSFET Datasheet lOutline VDSS 40V RDS(on)(Max.) 3.6mΩ DPAK ID ±60A TO-252 PD 40W lFeature.
ROHM
RD3G400GN - Power MOSFET
RD3G400GN Nch 40V 40A Power MOSFET Datasheet lOutline VDSS 40V RDS(on)(Max.) 7.5mΩ DPAK ID ±40A TO-252 PD 26W lFeature.
INCHANGE
RD3G400GN - N-Channel MOSFET
isc N-Channel MOSFET Transistor RD3G400GN FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R.
ROHM
RD3G01BAT - Power MOSFET
RD3G01BAT Pch -40V -15A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -40V 39mΩ ±15A 25W lFeatures 1) Low on - resistance 2) Fast switching spee.
ROHM
RD3G03BAT - Power MOSFET
RD3G03BAT Pch -40V -35A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -40V 19.1mΩ ±35A 56W lFeatures 1) Low on - resistance 2) Fast switching sp.
INCHANGE
RD3G600GN - N-Channel MOSFET
isc N-Channel MOSFET Transistor RD3G600GN FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R.
INCHANGE
RD3G500GN - N-Channel MOSFET
isc N-Channel MOSFET Transistor RD3G500GN FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R.
