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D4N60 Datasheet, Features, Application

D4N60 4A 600V N-channel Enhancement Mode Power MOSFET

4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-chann.

Silan

SVD4N60F - 600V N-Channel MOSFET

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transi.
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Oucan Semi

FQD4N60 - 600V 4A N-Channel MOSFET

FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an .
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ROUM

D4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET

4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t.
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Truesemi

TSD4N60M - N-Channel MOSFET

TSD4N60M TSD4N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. T.
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Wisdom technologies

WFD4N60 - N-Channel MOSFET

HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.
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Winsemi

WFD4N60 - Power MOSFET

WFD4N60 Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.
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Winsemi

WFD4N60B - Power MOSFET

WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100.
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Maple Semiconductor

SLD4N60C - N-Channel MOSFET

SLD4N60C / SLU4N60C SLD4N60C / SLU4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar s.
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BLUE ROCKET ELECTRONICS

BRD4N60 - N-CHANNEL MOSFET

BRD4N60 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge, .
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MagnaChip

MDD4N60 - N-Channel MOSFET

MDD4N60/MDI4N60 N-channel MOSFET 600V MDD4N60/MDI4N60 N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description These N-channel MOSFET are produced usin.
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TRinno

TMD4N60AZG - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve.
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TRinno

TMD4N60AZ - N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve.
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Alpha & Omega Semiconductors

AOD4N60 - 4A N-Channel MOSFET

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an .
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Fairchild Semiconductor

FDD4N60NZ - N-Channel MOSFET

FDD4N60NZ — N-Channel UniFETTM II MOSFET FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 Ω Features • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, I.
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Bruckewell

MSD4N60 - 600V N-Channel MOSFET

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fas.
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Wing On

PFD4N60EG - N-Channel MOSFET

PFU4N60EG / PFD4N60EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.
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Fairchild Semiconductor

FCD4N60 - N-Channel MOSFET

FCD4N60 600V N-Channel MOSFET FCD4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8.
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angstrem

AND4N60B - N-Chanel Power MOSFET

N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC.
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Silan

SVD4N60D - 600V N-Channel MOSFET

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transi.
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Silan

SVD4N60T - 600V N-Channel MOSFET

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transi.
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