WFD4N60

Power MOSFET

Winsemi

WFD4N60 Features

* 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 16nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Isolation Voltage ( VISO = 4000V AC )

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s ad

WFD4N60 General Description

This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant top.

WFD4N60 Datasheet (505.78 KB)

WFD4N60 Datasheet Preview — Preview of WFD4N60 PDF

Datasheet Details

Part number:

WFD4N60

Manufacturer:

Winsemi

File Size:

505.78 KB

Description:

Power mosfet.

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WFD4N60 Power MOSFET Winsemi

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WFD4N60 Features

WFD4N60 General Description

Datasheet Details

File Size:

Description:

WFD4N60 Distributor