Part number:
WFD430
Manufacturer:
Wisdom technologies
File Size:
865.00 KB
Description:
N-channel mosfet.
* RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain
* 1. Gate { ▲
* { 3. Source General Description This Power MOS
WFD430
Wisdom technologies
865.00 KB
N-channel mosfet.
📁 Related Datasheet
WFD4N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics.
WFD4N60 - Power MOSFET
(Winsemi)
WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.
WFD4N60B - Power MOSFET
(Winsemi)
WFD4N60B
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100.
WFD4N65S - Power MOSFET
(Winsemi)
WFD4N65S Product Description
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R.
WFD20N06 - Silicon N-Channel MOSFET
(Winsemi)
WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.
WFD2N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.
WFD2N60B - Silicon N-Channel MOSFET
(Winsemi)
WFD2N60B Product Description
Silicon N-Channel MOSFET
Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit.
WFD5N50 - Silicon N-Channel MOSFET
(Winsemi)
Features
■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junctio.
