Part number:
WFD4N65S
Manufacturer:
Winsemi
File Size:
167.77 KB
Description:
Power mosfet.
WFD4N65S Datasheet (167.77 KB)
WFD4N65S Datasheet (167.77 KB)
WFD4N65S
Winsemi
167.77 KB
Power mosfet.
* Ultra low Rdson
* Ultra low gate charge (typ. Qg =13nC)
* 100% UIS tested
* RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications
📁 Related Datasheet
WFD4N60 - N-Channel MOSFET
(Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics.
WFD4N60 - Power MOSFET
(Winsemi)
WFD4N60
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.
WFD4N60B - Power MOSFET
(Winsemi)
WFD4N60B
Silicon N-Channel MOSFET
Features
■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100.
WFD430 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFD430/WFU430
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capab.
WFD20N06 - Silicon N-Channel MOSFET
(Winsemi)
WFD20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.
WFD2N60 - N-Channel MOSFET
(Wisdom technologies)
Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.
