WFD4N65S Datasheet, Mosfet, Winsemi

WFD4N65S Features

• Mosfet � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. Th

PDF File Details

Part number:

WFD4N65S

Manufacturer:

Winsemi

File Size:

167.77kb

Download:

📄 Datasheet

Description:

Power mosfet. 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS complian

WFD4N65S Application

• Applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Continu

TAGS

WFD4N65S

Winsemi

📁 Related Datasheet

WFD4N60 - N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.

WFD4N60 - Power MOSFET (Winsemi)
WFD4N60 Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.

WFD4N60B - Power MOSFET (Winsemi)
WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100.

WFD430 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD430/WFU430 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capab.

WFD20N06 - Silicon N-Channel MOSFET (Winsemi)
WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.

WFD2N60 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.

WFD2N60B - Silicon N-Channel MOSFET (Winsemi)
WFD2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit.

WFD5N50 - Silicon N-Channel MOSFET (Winsemi)
Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junctio.

WFD5N60 - HIGH VOLTAGE N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.

WFD5N60B - Silicon N-Channel MOSFET (Winsemi)
WFD5N60B Product Description Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Swit.