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WFD2N60

N-Channel MOSFET

WFD2N60 Features

* RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain

* 1. Gate { ▲

* { 3. Source General Description This Power MO

WFD2N60 General Description

This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, activ.

WFD2N60 Datasheet (751.05 KB)

Preview of WFD2N60 PDF

Datasheet Details

Part number:

WFD2N60

Manufacturer:

Wisdom technologies

File Size:

751.05 KB

Description:

N-channel mosfet.

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WFD2N60 N-Channel MOSFET Wisdom technologies

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