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WFD4N60B

Power MOSFET

WFD4N60B Features

* 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 16nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Isolation Voltage ( VISO = 4000V AC )

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s ad

WFD4N60B General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topo.

WFD4N60B Datasheet (506.08 KB)

Preview of WFD4N60B PDF

Datasheet Details

Part number:

WFD4N60B

Manufacturer:

Winsemi

File Size:

506.08 KB

Description:

Power mosfet.

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WFD4N60B Power MOSFET Winsemi

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