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WFD830B N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor WFD830B *.

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Datasheet Specifications

Part number
WFD830B
Manufacturer
INCHANGE
File Size
226.46 KB
Datasheet
WFD830B-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Drain Current ID= 5A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Plused 20 A PD

WFD830B Distributors

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