Datasheet4U Logo Datasheet4U.com

WFD830

Silicon N-Channel MOSFET

WFD830 Features

* 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V

* Ultra-low Gate Charge(Typical 32nC)

* Fast Switching Capability

* 100%Avalanche Tested

* Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. T

WFD830 General Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supp.

WFD830 Datasheet (610.58 KB)

Preview of WFD830 PDF

Datasheet Details

Part number:

WFD830

Manufacturer:

Winsemi

File Size:

610.58 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

WFD830B - Silicon N-Channel MOSFET (Winsemi)
Free Datasheet http://.nDatasheet. WFD830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V Ultra-low Gate charge(.

WFD830B - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor WFD830B ·FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Res.

WFD20N06 - Silicon N-Channel MOSFET (Winsemi)
WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.

WFD2N60 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.

WFD2N60B - Silicon N-Channel MOSFET (Winsemi)
WFD2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit.

WFD430 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD430/WFU430 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capab.

WFD4N60 - N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.

WFD4N60 - Power MOSFET (Winsemi)
WFD4N60 Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.

TAGS

WFD830 Silicon N-Channel MOSFET Winsemi

Image Gallery

WFD830 Datasheet Preview Page 2 WFD830 Datasheet Preview Page 3

WFD830 Distributor