WFD20N06 - Silicon N-Channel MOSFET

Winsemi

WFD20N06 Datasheet Preview — Preview of WFD20N06 PDF

Datasheet Details

Part number	WFD20N06
Manufacturer	Winsemi
File Size	610.10 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFD20N06-Winsemi.pdf

WFD20N06 Product details

Description

This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

20A,60V, RDS(on)(Max 39mΩ)@VGS=10V.
Ultra-low Gate Charge(Typical 6.1nC).
High Current Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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Published: Mar 22, 2017 |