WFD5N60B Datasheet, Mosfet, Winsemi

WFD5N60B Features

• Mosfet � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Descrip

PDF File Details

Part number:

WFD5N60B

Manufacturer:

Winsemi

File Size:

241.48kb

Download:

📄 Datasheet

Description:

Silicon n-channel mosfet. Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capabi

TAGS

WFD5N60B

Winsemi

📁 Related Datasheet

WFD5N60 - HIGH VOLTAGE N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.

WFD5N65L - Silicon N-Channel MOSFET (Winsemi)
WFD5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 10.

WFD5N65L - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor WFD5N65L ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100.

WFD5N50 - Silicon N-Channel MOSFET (Winsemi)
Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junctio.

WFD20N06 - Silicon N-Channel MOSFET (Winsemi)
WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ High Current Capability ■ 1.

WFD2N60 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.

WFD2N60B - Silicon N-Channel MOSFET (Winsemi)
WFD2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Swit.

WFD430 - N-Channel MOSFET (Wisdom technologies)
Wisdom Semiconductor WFD430/WFU430 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capab.

WFD4N60 - N-Channel MOSFET (Wisdom technologies)
HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics.

WFD4N60 - Power MOSFET (Winsemi)
WFD4N60 Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%.